| PART |
Description |
Maker |
| MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 1N2981D 1N2987C 1N2973D 1N2987D 1N2989C 1N2980D 1N |
Diode Zener Single 17V 5% 10W 2-Pin DO-4
Diode Zener Single 25V 5% 10W 2-Pin DO-4
Diode Zener Single 9.1V 5% 10W 2-Pin DO-4
Diode Zener Single 30V 5% 10W 2-Pin DO-4
Diode Zener Single 16V 5% 10W 2-Pin DO-4
Diode Zener Single 7.5V 5% 10W 2-Pin DO-4
Diode Zener Single 24V 5% 10W 2-Pin DO-4
Diode Zener Single 175V 20% 10W 2-Pin DO-4
Diode Zener Single 50V 5% 10W 2-Pin DO-4
Diode Zener Single 43V 5% 10W 2-Pin DO-4
Diode Zener Single 56V 5% 10W 2-Pin DO-4
Diode Zener Single 13V 5% 10W 2-Pin DO-4
Diode Zener Single 8.2V 5% 10W 2-Pin DO-4
Diode Zener Single 15V 5% 10W 2-Pin DO-4
Diode Zener Single 27V 5% 10W 2-Pin DO-4
Diode Zener Single 18V 5% 10W 2-Pin DO-4
Diode Zener Single 105V 5% 10W 2-Pin DO-4
Diode Zener Single 52V 5% 10W 2-Pin DO-4
Diode Zener Single 47V 10% 10W 2-Pin DO-4
Diode Zener Single 36V 10% 10W 2-Pin DO-4
Diode Zener Single 36V 5% 10W 2-Pin DO-4
Diode Zener Single 51V 5% 10W 2-Pin DO-4
Diode Zener Single 47V 5% 10W 2-Pin DO-4
|
New Jersey Semiconductor
|
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7177A04 |
7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFS45A2527B |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2527 S452527 |
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
|
Mitsubishi
|
| MGFX36V0717 X360717 |
10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段4瓦国内MATCHD砷化镓场效应
From old datasheet system
|
Rohm Co., Ltd.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| SA5204AD SA5204AN NE5204 NE5204A NE5204AD NE5204AN |
RES 110 OHM 1/10W .5% 0805 SMD 0 MHz - 350 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Wide-band high-frequency amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
